In situ manipulation of perpendicular magnetic anisotropy in half-metallic NiCo<sub>2</sub>O<sub>4</sub> thin film by proton insertion
نویسندگان
چکیده
Abstract Herein we report the manipulation of perpendicular magnetic anisotropy (PMA), a very important technique for spintronics devices, which is achieved in an all-solid-state redox (reduction/oxidation) device. The device consisted NiCo 2 O 4 (NCO) thin film with c -axis orientation and proton-conducting polymer (Nafion). PMA NCO can be manipulated situ low voltage ( V ? 0.7 V) due to utilization solid electrolyte. variation was quantitatively evaluated by anomalous Hall measurement. field successfully range 5%, although rotation easy axis magnetization not observed. This modulation attributed strain electronic configuration proton insertion. method electrolyte enables variety reservoir states contributes lower power consumption high-precision machine learning.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2022
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/ac594f